2-D Design of Double Gate Schottky Tunnel MOSFET for High-Performance Use in Analog/RF Applications

• Main Authors: Rashid, S., Bashir, F., Khanday, F.A., Rafiq Beigh, M., Hussin, F.A.
• Format: Article
• Published: Institute of Electrical and Electronics Engineers Inc. 2021
• Online Access: https://www.scopus.com/inward/record.uri?eid=2-s2.0-85107173607&doi=10.1109%2fACCESS.2021.3083929&partnerID=40&md5=98214f16a9e85119155db7540b324640; http://eprints.utp.edu.my/29532/
• Institution: Universiti Teknologi Petronas

In this work, a new structure of Schottky tunneling MOSFET has been designed and simulated. The proposed device structure uses floating gates and dual material main gates to counter short channel effects and to improve RF/Analog figures of merit for low power design applications. The use of floating...