Experimental Analysis of Parameter Limitations in High-Frequency Resonant Gate Driver

• Main Authors: Yahaya, Nor Zaihar, Begam , Mumtaj, awan, mohammad
• Format: Book Section
• Published: IACSIT 2010
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utp.edu.my/4776/1/Journal_%5B08%5D.pdf; http://eprints.utp.edu.my/4776/
• Institution: Universiti Teknologi Petronas

In megahertz switching frequency, the effect of loss is significant. In diode-clamped resonant gate driver circuit, the resonant inductor current, duty ratio and dead time are the limiting parameters which bring implications to the switching loss and hence total gate drive loss. The experimental analysis has been carried out to validate the simulation results. From the predetermined inductor current of 9 nH, duty ratio of 20 % and dead time of 15 ns, remarkably, the experimental results show less than 10 % difference in value compared to the simulation. Therefore, this new finding validates that by using correct choice of these values, the diode-clamped resonant gate driver can operate better in higher switching frequency.