Simulation of an Inductive Coupled High Frequency Resonant Gate Driver Circuit

• Main Authors: Yahaya, Nor Zaihar, Begam , Mumtaj, awan, mohammad
• Format: Article
• Published: 2008
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utp.edu.my/5825/1/Paper_%5B06%5D.pdf; http://eprints.utp.edu.my/5825/
• Institution: Universiti Teknologi Petronas

The implementation of an independent-duty-cycled high frequency resonant gate driver (RGD) circuit utilizing an inductive coupled linear transformer is proposed and simulated using PSpice circuit simulator. The totem-poled configuration of driving MOSFETs that makes the resonant LC network is used in the proposed RGD circuit. The free-wheeling diodes are used to recover full energy where most of the charged and discharged operating current flow in the resonant inductor is returned back to the input source during switching cycle transition. The work has been carried out using 1 MHz switching frequency with fixed input and load conditions. With each pair of driving MOSFETs providing D and 1-D of switching ratios, the turn-on and turn-off speed has been improved by 12 % and 23 % respectively while the total RGD losses reduced to 4 %.