Chacterization on solution - Rocessed P-type CuO thin films for electronic devices application : Luận văn ThS. Công nghệ Nano
Recently, metal oxide based thin film transistors (TFTs) have attracted significant attention for application in display industry, for examples, flexible display, and flat panel display because of their excellent performances. In covalent semiconductor consisting of sp3 orbital, the bond angle si...
محفوظ في:
| المؤلف الرئيسي: | |
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| مؤلفون آخرون: | |
| التنسيق: | Theses and Dissertations |
| اللغة: | English |
| منشور في: |
2019
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| الموضوعات: | |
| الوصول للمادة أونلاين: | http://repository.vnu.edu.vn/handle/VNU_123/65723 |
| الوسوم: |
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| المؤسسة: | Vietnam National University, Hanoi |
| اللغة: | English |
| الملخص: | Recently, metal oxide based thin film transistors (TFTs) have attracted
significant attention for application in display industry, for examples, flexible
display, and flat panel display because of their excellent performances. In covalent
semiconductor consisting of sp3 orbital, the bond angle significantly affects to
charge transport in the bottom of the conduction band, leading to low mobility and
unsteady of silicon-based TFTs. However, the overlap between neighbor metal ns
orbital in metal oxide semiconductor could happen in an amorphous phase because
the carrier transport paths include both metal ns orbitals, which lead to high charge
carrier mobility in amorphous structures [1]. |
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