Stress induced half-metallicity in surface defected germanium nanowires

• Main Authors: Sk, Mahasin Alam, Ng, Man-Fai, Yang, Shuo-Wang, Lim, Kok Hwa
• 其他作者: School of Chemical and Biomedical Engineering
• 格式: Article
• 語言: English
• 出版: 2013
• 在線閱讀: https://hdl.handle.net/10356/100124; http://hdl.handle.net/10220/11032
• 機構: Nanyang Technological University

Germanium nanowires (GeNWs) with single, double, quadruple and octuple surface dangling bonds (SDBs) are investigated using density-functional-theory calculations. We show that single SDB defected GeNWs remain semiconducting as their non-defected form while double or multiple SDB defects result in e...