NBTI/PBTI-aware wordline voltage control with no boosted supply for stability improvement of half-selected SRAM cells

• المؤلفون الرئيسيون: Lee, Zhao Chuan, Ho, Kim Ming, Kong, Zhi Hui, Kim, Tony Tae-Hyoung
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: Conference or Workshop Item
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/100241; http://hdl.handle.net/10220/13598

Negative Bias Temperature Instability (NBTI) and Positive Bias Temperature Instability (PBTI) are the two important reliability issues that degrade the SRAM cell stability over time. In this paper, we analyze the impact of NBTI and PBTI on 8T SRAM cells, and propose a stability improvement technique...