APA استشهاد

Ng, T. K., Yoon, S. F., Wang, S. Z., Loke, W. K., Fan, W., & Engineering, S. o. E. a. E. (2013). Photoluminescence characteristics of GaInNAs quantum wells annealed at high temperature.

استشهاد بنمط شيكاغو

Ng, T. K., Soon Fatt Yoon, S. Z. Wang, Wan Khai Loke, Weijun Fan, و School of Electrical and Electronic Engineering. Photoluminescence Characteristics of GaInNAs Quantum Wells Annealed At High Temperature. 2013.

MLA استشهاد

Ng, T. K., et al. Photoluminescence Characteristics of GaInNAs Quantum Wells Annealed At High Temperature. 2013.

تحذير: قد لا تكون هذه الاستشهادات دائما دقيقة بنسبة 100%.