APA استشهاد

Li, H., Mei, T., Karunasiri, G., Yuan, K. H., Fan, W., Zhang, D. H., . . . Engineering, S. o. E. a. E. (2013). Growth of p-type GaAs∕AlGaAs(111) quantum well infrared photodetector using solid source molecular-beam epitaxy.

استشهاد بنمط شيكاغو

Li, H., T. Mei, G. Karunasiri, K. H. Yuan, Weijun Fan, Dao Hua Zhang, Soon Fatt Yoon, و School of Electrical and Electronic Engineering. Growth of P-type GaAs∕AlGaAs(111) Quantum Well Infrared Photodetector Using Solid Source Molecular-beam Epitaxy. 2013.

MLA استشهاد

Li, H., et al. Growth of P-type GaAs∕AlGaAs(111) Quantum Well Infrared Photodetector Using Solid Source Molecular-beam Epitaxy. 2013.

تحذير: قد لا تكون هذه الاستشهادات دائما دقيقة بنسبة 100%.