APA引文

Li, H., Mei, T., Karunasiri, G., Yuan, K. H., Fan, W., Zhang, D. H., . . . Engineering, S. o. E. a. E. (2013). Growth of p-type GaAs∕AlGaAs(111) quantum well infrared photodetector using solid source molecular-beam epitaxy.

Chicago Style Citation

Li, H., T. Mei, G. Karunasiri, K. H. Yuan, Weijun Fan, Dao Hua Zhang, Soon Fatt Yoon, and School of Electrical and Electronic Engineering. Growth of P-type GaAs∕AlGaAs(111) Quantum Well Infrared Photodetector Using Solid Source Molecular-beam Epitaxy. 2013.

MLA引文

Li, H., et al. Growth of P-type GaAs∕AlGaAs(111) Quantum Well Infrared Photodetector Using Solid Source Molecular-beam Epitaxy. 2013.