Gao, Y., Ang, D. S., Gu, C. J., & Engineering, S. o. E. a. E. (2014). On the evolution of switching oxide traps in the HfO2/TiN gate stack subjected to positive- and negative-bias temperature stressing.
Chicago Style CitationGao, Yuan, Diing Shenp Ang, Chen Jie Gu, and School of Electrical and Electronic Engineering. On the Evolution of Switching Oxide Traps in the HfO2/TiN Gate Stack Subjected to Positive- and Negative-bias Temperature Stressing. 2014.
MLA引文Gao, Yuan, Diing Shenp Ang, Chen Jie Gu, and School of Electrical and Electronic Engineering. On the Evolution of Switching Oxide Traps in the HfO2/TiN Gate Stack Subjected to Positive- and Negative-bias Temperature Stressing. 2014.
警告：這些引文格式不一定是100％准確.