發送短信 : Influence of post-deposition annealing on interfacial properties between GaN and ZrO2 grown by atomic layer deposition

  _  __   _    _    ______     _____    _____    
 | |/ // | || | || |      \\  |  ___|| |  __ \\  
 | ' //  | || | || |  --  //  | ||__   | |  \ || 
 | . \\  | \\_/ || |  --  \\  | ||__   | |__/ || 
 |_|\_\\  \____//  |______//  |_____|| |_____//  
 `-` --`   `---`   `------`   `-----`   -----`