Importance of Schottky barriers for wide-bandgap thermoelectric devices
The development of thermoelectric devices faces not only the challenge of optimizing the Seebeck coefficient, the electrical and thermal conductivity of the active material, but also further bottlenecks when going from the thermoelectric material to an actual device, e.g., the dopant diffusion at th...
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sg-ntu-dr.10356-1023852023-02-28T19:42:30Z Importance of Schottky barriers for wide-bandgap thermoelectric devices Wais, M. Held, K. Battiato, Marco School of Physical and Mathematical Sciences DRNTU::Science::Physics Seebeck Effect Thermopower The development of thermoelectric devices faces not only the challenge of optimizing the Seebeck coefficient, the electrical and thermal conductivity of the active material, but also further bottlenecks when going from the thermoelectric material to an actual device, e.g., the dopant diffusion at the hot contact. We show that for large bandgap thermoelectrics another aspect can dramatically reduce the efficiency of the device: the formation of Schottky barriers. Understanding the effect, it can then be fixed rather cheaply by a two-metal contact solution. Published version 2019-06-07T01:27:09Z 2019-12-06T20:54:10Z 2019-06-07T01:27:09Z 2019-12-06T20:54:10Z 2018 Journal Article Wais, M., Held, K., & Battiato, M. (2018). Importance of Schottky barriers for wide-bandgap thermoelectric devices. Physical Review Materials, 2(4), 045402-. doi:10.1103/PhysRevMaterials.2.045402 https://hdl.handle.net/10356/102385 http://hdl.handle.net/10220/48589 10.1103/PhysRevMaterials.2.045402 en Physical Review Materials © 2018 American Physical Society. All rights reserved. This paper was published in Physical Review Materials and is made available with permission of American Physical Society. 6 p. application/pdf |
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DRNTU::Science::Physics Seebeck Effect Thermopower |
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DRNTU::Science::Physics Seebeck Effect Thermopower Wais, M. Held, K. Battiato, Marco Importance of Schottky barriers for wide-bandgap thermoelectric devices |
| description |
The development of thermoelectric devices faces not only the challenge of optimizing the Seebeck coefficient, the electrical and thermal conductivity of the active material, but also further bottlenecks when going from the thermoelectric material to an actual device, e.g., the dopant diffusion at the hot contact. We show that for large bandgap thermoelectrics another aspect can dramatically reduce the efficiency of the device: the formation of Schottky barriers. Understanding the effect, it can then be fixed rather cheaply by a two-metal contact solution. |
| author2 |
School of Physical and Mathematical Sciences |
| author_facet |
School of Physical and Mathematical Sciences Wais, M. Held, K. Battiato, Marco |
| format |
Article |
| author |
Wais, M. Held, K. Battiato, Marco |
| author_sort |
Wais, M. |
| title |
Importance of Schottky barriers for wide-bandgap thermoelectric devices |
| title_short |
Importance of Schottky barriers for wide-bandgap thermoelectric devices |
| title_full |
Importance of Schottky barriers for wide-bandgap thermoelectric devices |
| title_fullStr |
Importance of Schottky barriers for wide-bandgap thermoelectric devices |
| title_full_unstemmed |
Importance of Schottky barriers for wide-bandgap thermoelectric devices |
| title_sort |
importance of schottky barriers for wide-bandgap thermoelectric devices |
| publishDate |
2019 |
| url |
https://hdl.handle.net/10356/102385 http://hdl.handle.net/10220/48589 |
| _version_ |
1759857035194662912 |