APA استشهاد

Kim, T. T., Lee, Z. C., Do, A. T., & Engineering, S. o. E. a. E. (2019). A 32 kb 9T near-threshold SRAM with enhanced read ability at ultra-low voltage operation.

استشهاد بنمط شيكاغو

Kim, Tony Tae-Hyoung, Zhao Chuan Lee, Anh Tuan Do, و School of Electrical and Electronic Engineering. A 32 kb 9T Near-threshold SRAM With Enhanced Read Ability At Ultra-low Voltage Operation. 2019.

MLA استشهاد

Kim, Tony Tae-Hyoung, Zhao Chuan Lee, Anh Tuan Do, و School of Electrical and Electronic Engineering. A 32 kb 9T Near-threshold SRAM With Enhanced Read Ability At Ultra-low Voltage Operation. 2019.

تحذير: قد لا تكون هذه الاستشهادات دائما دقيقة بنسبة 100%.