Kim, T. T., Lee, Z. C., Do, A. T., & Engineering, S. o. E. a. E. (2019). A 32 kb 9T near-threshold SRAM with enhanced read ability at ultra-low voltage operation.
Chicago Style CitationKim, Tony Tae-Hyoung, Zhao Chuan Lee, Anh Tuan Do, and School of Electrical and Electronic Engineering. A 32 kb 9T Near-threshold SRAM With Enhanced Read Ability At Ultra-low Voltage Operation. 2019.
MLA引文Kim, Tony Tae-Hyoung, Zhao Chuan Lee, Anh Tuan Do, and School of Electrical and Electronic Engineering. A 32 kb 9T Near-threshold SRAM With Enhanced Read Ability At Ultra-low Voltage Operation. 2019.
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