Ravikiran, L., Dharmarasu, N., Radhakrishnan, K., Agrawal, M., Yiding, L., Arulkumaran, S., . . . Engineering, S. o. E. a. E. (2015). Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy.

Ravikiran, L., N. Dharmarasu, K. Radhakrishnan, M. Agrawal, Lin Yiding, S. Arulkumaran, S. Vicknesh, G. I. Ng, و School of Electrical and Electronic Engineering. Growth and Characterization of AlGaN/GaN/AlGaN Double-heterojunction High-electron-mobility Transistors On 100-mm Si(111) Using Ammonia-molecular Beam Epitaxy. 2015.

Ravikiran, L., et al. Growth and Characterization of AlGaN/GaN/AlGaN Double-heterojunction High-electron-mobility Transistors On 100-mm Si(111) Using Ammonia-molecular Beam Epitaxy. 2015.