Ravikiran, L., Dharmarasu, N., Radhakrishnan, K., Agrawal, M., Yiding, L., Arulkumaran, S., . . . Engineering, S. o. E. a. E. (2015). Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy.

Ravikiran, L., N. Dharmarasu, K. Radhakrishnan, M. Agrawal, Lin Yiding, S. Arulkumaran, S. Vicknesh, G. I. Ng, and School of Electrical and Electronic Engineering. Growth and Characterization of AlGaN/GaN/AlGaN Double-heterojunction High-electron-mobility Transistors On 100-mm Si(111) Using Ammonia-molecular Beam Epitaxy. 2015.

Ravikiran, L., et al. Growth and Characterization of AlGaN/GaN/AlGaN Double-heterojunction High-electron-mobility Transistors On 100-mm Si(111) Using Ammonia-molecular Beam Epitaxy. 2015.