APA引文

Ravikiran, L., Dharmarasu, N., Radhakrishnan, K., Agrawal, M., Yiding, L., Arulkumaran, S., . . . Engineering, S. o. E. a. E. (2015). Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy.

Chicago Style Citation

Ravikiran, L., N. Dharmarasu, K. Radhakrishnan, M. Agrawal, Lin Yiding, S. Arulkumaran, S. Vicknesh, G. I. Ng, and School of Electrical and Electronic Engineering. Growth and Characterization of AlGaN/GaN/AlGaN Double-heterojunction High-electron-mobility Transistors On 100-mm Si(111) Using Ammonia-molecular Beam Epitaxy. 2015.

MLA引文

Ravikiran, L., et al. Growth and Characterization of AlGaN/GaN/AlGaN Double-heterojunction High-electron-mobility Transistors On 100-mm Si(111) Using Ammonia-molecular Beam Epitaxy. 2015.