Text this: Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy

  _____     _____     _____    __   __   _____    
 |__  //   |  ___||  /  ___||  \ \\/ // |  __ \\  
   / //    | ||__   | // __     \ ` //  | |  \ || 
  / //__   | ||__   | \\_\ ||    | ||   | |__/ || 
 /_____||  |_____||  \____//     |_||   |_____//  
 `-----`   `-----`    `---`      `-`'    -----`