أرسل هذا في رسالة قصيرة: High-frequency characteristics of InGaP/GaAs double heterojunction bipolar transistor epitaxially grown on 200 mm Ge/Si wafers

  ______    _____      _____    _____    ______   
 /_   _//  |  ___||   / ___//  |  ___|| |      \\ 
   | ||    | ||__     \___ \\  | ||__   |  --  // 
  _| ||    | ||__     /    //  | ||__   |  --  \\ 
 /__//     |_____||  /____//   |_____|| |______// 
 `--`      `-----`  `-----`    `-----`  `------`