Stable Sn2+ doped FAPbI3 nanocrystals for near-infrared LEDs

Herein, we report Sn2+ doping in FAPbI3 NCs to stabilize the α-phase, while using propionic acid as a co-ligand. The Sn2+ doping enhances the emission quantum yield from 35% to 63% and dramatically improves the colloidal and phase stability. Also, we demonstrated the use of Sn doped FAPbI3 NCs in ne...

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Bibliographic Details
Main Authors: Begum, Raihana, Chin, Xin Yu, Li, Mingjie, Damodaran, Bahulayan, Sum, Tze Chien, Mhaisalkar, Subodh, Mathews, Nripan
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2020
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Online Access:https://hdl.handle.net/10356/138278
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Institution: Nanyang Technological University
Language: English
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Summary:Herein, we report Sn2+ doping in FAPbI3 NCs to stabilize the α-phase, while using propionic acid as a co-ligand. The Sn2+ doping enhances the emission quantum yield from 35% to 63% and dramatically improves the colloidal and phase stability. Also, we demonstrated the use of Sn doped FAPbI3 NCs in near-infrared (NIR) LEDs.