Stable Sn2+ doped FAPbI3 nanocrystals for near-infrared LEDs
Herein, we report Sn2+ doping in FAPbI3 NCs to stabilize the α-phase, while using propionic acid as a co-ligand. The Sn2+ doping enhances the emission quantum yield from 35% to 63% and dramatically improves the colloidal and phase stability. Also, we demonstrated the use of Sn doped FAPbI3 NCs in ne...
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Main Authors: | , , , , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2020
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/138278 |
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Institution: | Nanyang Technological University |
Language: | English |
Summary: | Herein, we report Sn2+ doping in FAPbI3 NCs to stabilize the α-phase, while using propionic acid as a co-ligand. The Sn2+ doping enhances the emission quantum yield from 35% to 63% and dramatically improves the colloidal and phase stability. Also, we demonstrated the use of Sn doped FAPbI3 NCs in near-infrared (NIR) LEDs. |
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