Synergistic gating of electro‐iono‐photoactive 2D chalcogenide neuristors : coexistence of Hebbian and homeostatic synaptic metaplasticity
Emulation of brain-like signal processing with thin-film devices could lay the foundation for building artificially intelligent learning circuitry in future. Encompassing higher functionalities into single artificial neural elements will allow the development of robust neuromorphic circuitry emulati...
Saved in:
Main Authors: | , , , , , , , |
---|---|
Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2020
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/138300 https://doi.org/10.21979/N9/P6KRNF |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
id |
sg-ntu-dr.10356-138300 |
---|---|
record_format |
dspace |
spelling |
sg-ntu-dr.10356-1383002023-07-14T16:04:19Z Synergistic gating of electro‐iono‐photoactive 2D chalcogenide neuristors : coexistence of Hebbian and homeostatic synaptic metaplasticity John, Rohit Abharam Liu, Fucai Chien, Nguyen Anh Kulkarni, Mohit Rameshchandra Zhu, Chao Fu, Qundong Basu, Arindam Liu, Zheng School of Electrical and Electronic Engineering School of Materials Science and Engineering Energy Research Institute @ NTU (ERI@N) Engineering::Materials 2D Chalcogenides Associative Learning Emulation of brain-like signal processing with thin-film devices could lay the foundation for building artificially intelligent learning circuitry in future. Encompassing higher functionalities into single artificial neural elements will allow the development of robust neuromorphic circuitry emulating biological adaptation mechanisms with drastically lesser neural elements, mitigating strict process challenges and high circuit density requirements necessary to match the computational complexity of the human brain. Here, 2D transition metal di-chalcogenide (TMDC) (MoS2) neuristors are designed to mimic intracellular ion endocytosis-exocytosis dynamics / neurotransmitter-release in chemical synapses using three approaches: (i) electronic-mode: a defect modulation approach where the traps at the semiconductor-dielectric interface are perturbed, (ii) ionotronic-mode: where electronic responses are modulated via ionic gating and (iii) photoactive-mode: harnessing persistent photoconductivity or trap-assisted slow recombination mechanisms. Exploiting a novel multi-gated architecture incorporating electrical and optical biases, this incarnation not only addresses different charge-trapping probabilities to finely modulate the synaptic weights, but also amalgamates neuromodulation schemes to achieve “plasticity of plasticity-metaplasticity” via dynamic control of Hebbian spike-time dependent plasticity and homeostatic regulation. Co-existence of such multiple forms of synaptic plasticity increases the efficacy of memory storage and processing capacity of artificial neuristors, enabling design of highly efficient novel neural architectures. NRF (Natl Research Foundation, S’pore) MOE (Min. of Education, S’pore) Accepted version 2020-04-30T05:40:16Z 2020-04-30T05:40:16Z 2018 Journal Article John, R. A., Liu, F., Chien, N. A., Kulkarni, M. R., Zhu, C., Fu, Q., . . . Mathews, N. (2018). Synergistic gating of electro‐iono‐photoactive 2D chalcogenide neuristors : coexistence of Hebbian and homeostatic synaptic metaplasticity. Advanced Materials, 30(25), 1800220-. doi:10.1002/adma.201800220 0935-9648 https://hdl.handle.net/10356/138300 10.1002/adma.201800220 25 30 en Advanced Materials https://doi.org/10.21979/N9/P6KRNF © 2018 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim. All rights reserved. This paper was published in Advanced Materials and is made available with permission of WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim. application/pdf |
institution |
Nanyang Technological University |
building |
NTU Library |
continent |
Asia |
country |
Singapore Singapore |
content_provider |
NTU Library |
collection |
DR-NTU |
language |
English |
topic |
Engineering::Materials 2D Chalcogenides Associative Learning |
spellingShingle |
Engineering::Materials 2D Chalcogenides Associative Learning John, Rohit Abharam Liu, Fucai Chien, Nguyen Anh Kulkarni, Mohit Rameshchandra Zhu, Chao Fu, Qundong Basu, Arindam Liu, Zheng Synergistic gating of electro‐iono‐photoactive 2D chalcogenide neuristors : coexistence of Hebbian and homeostatic synaptic metaplasticity |
description |
Emulation of brain-like signal processing with thin-film devices could lay the foundation for building artificially intelligent learning circuitry in future. Encompassing higher functionalities into single artificial neural elements will allow the development of robust neuromorphic circuitry emulating biological adaptation mechanisms with drastically lesser neural elements, mitigating strict process challenges and high circuit density requirements necessary to match the computational complexity of the human brain. Here, 2D transition metal di-chalcogenide (TMDC) (MoS2) neuristors are designed to mimic intracellular ion endocytosis-exocytosis dynamics / neurotransmitter-release in chemical synapses using three approaches: (i) electronic-mode: a defect modulation approach where the traps at the semiconductor-dielectric interface are perturbed, (ii) ionotronic-mode: where electronic responses are modulated via ionic gating and (iii) photoactive-mode: harnessing persistent photoconductivity or trap-assisted slow recombination mechanisms. Exploiting a novel multi-gated architecture incorporating electrical and optical biases, this incarnation not only addresses different charge-trapping probabilities to finely modulate the synaptic weights, but also amalgamates neuromodulation schemes to achieve “plasticity of plasticity-metaplasticity” via dynamic control of Hebbian spike-time dependent plasticity and homeostatic regulation. Co-existence of such multiple forms of synaptic plasticity increases the efficacy of memory storage and processing capacity of artificial neuristors, enabling design of highly efficient novel neural architectures. |
author2 |
School of Electrical and Electronic Engineering |
author_facet |
School of Electrical and Electronic Engineering John, Rohit Abharam Liu, Fucai Chien, Nguyen Anh Kulkarni, Mohit Rameshchandra Zhu, Chao Fu, Qundong Basu, Arindam Liu, Zheng |
format |
Article |
author |
John, Rohit Abharam Liu, Fucai Chien, Nguyen Anh Kulkarni, Mohit Rameshchandra Zhu, Chao Fu, Qundong Basu, Arindam Liu, Zheng |
author_sort |
John, Rohit Abharam |
title |
Synergistic gating of electro‐iono‐photoactive 2D chalcogenide neuristors : coexistence of Hebbian and homeostatic synaptic metaplasticity |
title_short |
Synergistic gating of electro‐iono‐photoactive 2D chalcogenide neuristors : coexistence of Hebbian and homeostatic synaptic metaplasticity |
title_full |
Synergistic gating of electro‐iono‐photoactive 2D chalcogenide neuristors : coexistence of Hebbian and homeostatic synaptic metaplasticity |
title_fullStr |
Synergistic gating of electro‐iono‐photoactive 2D chalcogenide neuristors : coexistence of Hebbian and homeostatic synaptic metaplasticity |
title_full_unstemmed |
Synergistic gating of electro‐iono‐photoactive 2D chalcogenide neuristors : coexistence of Hebbian and homeostatic synaptic metaplasticity |
title_sort |
synergistic gating of electro‐iono‐photoactive 2d chalcogenide neuristors : coexistence of hebbian and homeostatic synaptic metaplasticity |
publishDate |
2020 |
url |
https://hdl.handle.net/10356/138300 https://doi.org/10.21979/N9/P6KRNF |
_version_ |
1773551213774635008 |