Synergistic gating of electro‐iono‐photoactive 2D chalcogenide neuristors : coexistence of Hebbian and homeostatic synaptic metaplasticity

Emulation of brain-like signal processing with thin-film devices could lay the foundation for building artificially intelligent learning circuitry in future. Encompassing higher functionalities into single artificial neural elements will allow the development of robust neuromorphic circuitry emulati...

Full description

Saved in:
Bibliographic Details
Main Authors: John, Rohit Abharam, Liu, Fucai, Chien, Nguyen Anh, Kulkarni, Mohit Rameshchandra, Zhu, Chao, Fu, Qundong, Basu, Arindam, Liu, Zheng
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2020
Subjects:
Online Access:https://hdl.handle.net/10356/138300
https://doi.org/10.21979/N9/P6KRNF
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English
id sg-ntu-dr.10356-138300
record_format dspace
spelling sg-ntu-dr.10356-1383002023-07-14T16:04:19Z Synergistic gating of electro‐iono‐photoactive 2D chalcogenide neuristors : coexistence of Hebbian and homeostatic synaptic metaplasticity John, Rohit Abharam Liu, Fucai Chien, Nguyen Anh Kulkarni, Mohit Rameshchandra Zhu, Chao Fu, Qundong Basu, Arindam Liu, Zheng School of Electrical and Electronic Engineering School of Materials Science and Engineering Energy Research Institute @ NTU (ERI@N) Engineering::Materials 2D Chalcogenides Associative Learning Emulation of brain-like signal processing with thin-film devices could lay the foundation for building artificially intelligent learning circuitry in future. Encompassing higher functionalities into single artificial neural elements will allow the development of robust neuromorphic circuitry emulating biological adaptation mechanisms with drastically lesser neural elements, mitigating strict process challenges and high circuit density requirements necessary to match the computational complexity of the human brain. Here, 2D transition metal di-chalcogenide (TMDC) (MoS2) neuristors are designed to mimic intracellular ion endocytosis-exocytosis dynamics / neurotransmitter-release in chemical synapses using three approaches: (i) electronic-mode: a defect modulation approach where the traps at the semiconductor-dielectric interface are perturbed, (ii) ionotronic-mode: where electronic responses are modulated via ionic gating and (iii) photoactive-mode: harnessing persistent photoconductivity or trap-assisted slow recombination mechanisms. Exploiting a novel multi-gated architecture incorporating electrical and optical biases, this incarnation not only addresses different charge-trapping probabilities to finely modulate the synaptic weights, but also amalgamates neuromodulation schemes to achieve “plasticity of plasticity-metaplasticity” via dynamic control of Hebbian spike-time dependent plasticity and homeostatic regulation. Co-existence of such multiple forms of synaptic plasticity increases the efficacy of memory storage and processing capacity of artificial neuristors, enabling design of highly efficient novel neural architectures. NRF (Natl Research Foundation, S’pore) MOE (Min. of Education, S’pore) Accepted version 2020-04-30T05:40:16Z 2020-04-30T05:40:16Z 2018 Journal Article John, R. A., Liu, F., Chien, N. A., Kulkarni, M. R., Zhu, C., Fu, Q., . . . Mathews, N. (2018). Synergistic gating of electro‐iono‐photoactive 2D chalcogenide neuristors : coexistence of Hebbian and homeostatic synaptic metaplasticity. Advanced Materials, 30(25), 1800220-. doi:10.1002/adma.201800220 0935-9648 https://hdl.handle.net/10356/138300 10.1002/adma.201800220 25 30 en Advanced Materials https://doi.org/10.21979/N9/P6KRNF © 2018 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim. All rights reserved. This paper was published in Advanced Materials and is made available with permission of WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering::Materials
2D Chalcogenides
Associative Learning
spellingShingle Engineering::Materials
2D Chalcogenides
Associative Learning
John, Rohit Abharam
Liu, Fucai
Chien, Nguyen Anh
Kulkarni, Mohit Rameshchandra
Zhu, Chao
Fu, Qundong
Basu, Arindam
Liu, Zheng
Synergistic gating of electro‐iono‐photoactive 2D chalcogenide neuristors : coexistence of Hebbian and homeostatic synaptic metaplasticity
description Emulation of brain-like signal processing with thin-film devices could lay the foundation for building artificially intelligent learning circuitry in future. Encompassing higher functionalities into single artificial neural elements will allow the development of robust neuromorphic circuitry emulating biological adaptation mechanisms with drastically lesser neural elements, mitigating strict process challenges and high circuit density requirements necessary to match the computational complexity of the human brain. Here, 2D transition metal di-chalcogenide (TMDC) (MoS2) neuristors are designed to mimic intracellular ion endocytosis-exocytosis dynamics / neurotransmitter-release in chemical synapses using three approaches: (i) electronic-mode: a defect modulation approach where the traps at the semiconductor-dielectric interface are perturbed, (ii) ionotronic-mode: where electronic responses are modulated via ionic gating and (iii) photoactive-mode: harnessing persistent photoconductivity or trap-assisted slow recombination mechanisms. Exploiting a novel multi-gated architecture incorporating electrical and optical biases, this incarnation not only addresses different charge-trapping probabilities to finely modulate the synaptic weights, but also amalgamates neuromodulation schemes to achieve “plasticity of plasticity-metaplasticity” via dynamic control of Hebbian spike-time dependent plasticity and homeostatic regulation. Co-existence of such multiple forms of synaptic plasticity increases the efficacy of memory storage and processing capacity of artificial neuristors, enabling design of highly efficient novel neural architectures.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
John, Rohit Abharam
Liu, Fucai
Chien, Nguyen Anh
Kulkarni, Mohit Rameshchandra
Zhu, Chao
Fu, Qundong
Basu, Arindam
Liu, Zheng
format Article
author John, Rohit Abharam
Liu, Fucai
Chien, Nguyen Anh
Kulkarni, Mohit Rameshchandra
Zhu, Chao
Fu, Qundong
Basu, Arindam
Liu, Zheng
author_sort John, Rohit Abharam
title Synergistic gating of electro‐iono‐photoactive 2D chalcogenide neuristors : coexistence of Hebbian and homeostatic synaptic metaplasticity
title_short Synergistic gating of electro‐iono‐photoactive 2D chalcogenide neuristors : coexistence of Hebbian and homeostatic synaptic metaplasticity
title_full Synergistic gating of electro‐iono‐photoactive 2D chalcogenide neuristors : coexistence of Hebbian and homeostatic synaptic metaplasticity
title_fullStr Synergistic gating of electro‐iono‐photoactive 2D chalcogenide neuristors : coexistence of Hebbian and homeostatic synaptic metaplasticity
title_full_unstemmed Synergistic gating of electro‐iono‐photoactive 2D chalcogenide neuristors : coexistence of Hebbian and homeostatic synaptic metaplasticity
title_sort synergistic gating of electro‐iono‐photoactive 2d chalcogenide neuristors : coexistence of hebbian and homeostatic synaptic metaplasticity
publishDate 2020
url https://hdl.handle.net/10356/138300
https://doi.org/10.21979/N9/P6KRNF
_version_ 1773551213774635008