Augmenting machine learning to thermoelectric measurements : using Bayesian inference to infer electronic transport parameters from device level power-load data

Thermoelectric materials efficiency is characterized by Figure of Merit. Figure of Merit depends on several thermoelectric descriptors which is thermal conductivity and Power Factor, which is equal to the product of electrical conductivity and square of Seebeck coefficient. Hence, scientists have be...

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Main Author: Darmawan, Michael
Other Authors: Alex Yan Qingyu
Format: Final Year Project
Language:English
Published: Nanyang Technological University 2020
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Online Access:https://hdl.handle.net/10356/138868
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spelling sg-ntu-dr.10356-1388682023-03-04T15:47:31Z Augmenting machine learning to thermoelectric measurements : using Bayesian inference to infer electronic transport parameters from device level power-load data Darmawan, Michael Alex Yan Qingyu School of Materials Science and Engineering A*STAR - Institute of Materials Research and Engineering alexyan@ntu.edu.sg Engineering::Materials::Microelectronics and semiconductor materials Engineering::Materials::Energy materials Thermoelectric materials efficiency is characterized by Figure of Merit. Figure of Merit depends on several thermoelectric descriptors which is thermal conductivity and Power Factor, which is equal to the product of electrical conductivity and square of Seebeck coefficient. Hence, scientists have been looking for a rapid characterization of thermoelectric for highput materials synthesis. In this project, we use Bayesian inference algorithm on power-load experiment dat to infer the transport properties of thermoelectric materials. We focused on conventional Bi-Sb-Te thermoelectric materials,Bi0.4Sb1.6Te3, Bi0.5Sb1.5Te3, and Bi0.6Sb1.4Te3. These samples are prepared using ball miling followed by Spark Plasma Sintering (SPS) process. We obtained the power out of a single leg as function of load resistance at base temperature of 300 K in ultra-high vacuum in a closed-cycle He cryostat. The experiment is repeated under different temperature gradients accros the samples as discriminative testing condition for the machine learning algorithm to infer the electrical transport properties. Seebeck coefficient (S), electrical conductivity (), contact resistance (Rc), and error in temperature difference are inferred and presented in probability distribution. Along with these parameters, Bayesian inference helps to estimate the intrinsic properties of thermoelectric materials, such as energy depedent scattering, doping and weighted average mobility, which are very tedious to measure experimentally. Bachelor of Engineering (Materials Engineering) 2020-05-13T07:34:03Z 2020-05-13T07:34:03Z 2020 Final Year Project (FYP) https://hdl.handle.net/10356/138868 en MSE/19/152 application/pdf Nanyang Technological University
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering::Materials::Microelectronics and semiconductor materials
Engineering::Materials::Energy materials
spellingShingle Engineering::Materials::Microelectronics and semiconductor materials
Engineering::Materials::Energy materials
Darmawan, Michael
Augmenting machine learning to thermoelectric measurements : using Bayesian inference to infer electronic transport parameters from device level power-load data
description Thermoelectric materials efficiency is characterized by Figure of Merit. Figure of Merit depends on several thermoelectric descriptors which is thermal conductivity and Power Factor, which is equal to the product of electrical conductivity and square of Seebeck coefficient. Hence, scientists have been looking for a rapid characterization of thermoelectric for highput materials synthesis. In this project, we use Bayesian inference algorithm on power-load experiment dat to infer the transport properties of thermoelectric materials. We focused on conventional Bi-Sb-Te thermoelectric materials,Bi0.4Sb1.6Te3, Bi0.5Sb1.5Te3, and Bi0.6Sb1.4Te3. These samples are prepared using ball miling followed by Spark Plasma Sintering (SPS) process. We obtained the power out of a single leg as function of load resistance at base temperature of 300 K in ultra-high vacuum in a closed-cycle He cryostat. The experiment is repeated under different temperature gradients accros the samples as discriminative testing condition for the machine learning algorithm to infer the electrical transport properties. Seebeck coefficient (S), electrical conductivity (), contact resistance (Rc), and error in temperature difference are inferred and presented in probability distribution. Along with these parameters, Bayesian inference helps to estimate the intrinsic properties of thermoelectric materials, such as energy depedent scattering, doping and weighted average mobility, which are very tedious to measure experimentally.
author2 Alex Yan Qingyu
author_facet Alex Yan Qingyu
Darmawan, Michael
format Final Year Project
author Darmawan, Michael
author_sort Darmawan, Michael
title Augmenting machine learning to thermoelectric measurements : using Bayesian inference to infer electronic transport parameters from device level power-load data
title_short Augmenting machine learning to thermoelectric measurements : using Bayesian inference to infer electronic transport parameters from device level power-load data
title_full Augmenting machine learning to thermoelectric measurements : using Bayesian inference to infer electronic transport parameters from device level power-load data
title_fullStr Augmenting machine learning to thermoelectric measurements : using Bayesian inference to infer electronic transport parameters from device level power-load data
title_full_unstemmed Augmenting machine learning to thermoelectric measurements : using Bayesian inference to infer electronic transport parameters from device level power-load data
title_sort augmenting machine learning to thermoelectric measurements : using bayesian inference to infer electronic transport parameters from device level power-load data
publisher Nanyang Technological University
publishDate 2020
url https://hdl.handle.net/10356/138868
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