Gate-tunable resonant Raman spectroscopy of bilayer MoS2

• المؤلفون الرئيسيون: Lu, Xin, Muhammad Iqbal Bakti Utama, Wang, Xingzhi, Xu, Weigao, Zhao, Weijie, Owen, Samuel Man Hon, Xiong, Qihua
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2020
• الموضوعات: Science::Physics; Electron Doping; Gate‐tunable
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/140460

The gate‐tunable phonon properties in bilayer MoS2 are shown to be dependent on excitation energy. Raman intensity, Raman shift, and linewidth are affected by resonant excitation, while a nonresonant laser does not influence the intensity significantly. The gate‐dependent Raman shift of A1g mode (ei...