Gate-tunable resonant Raman spectroscopy of bilayer MoS2

• Main Authors: Lu, Xin, Muhammad Iqbal Bakti Utama, Wang, Xingzhi, Xu, Weigao, Zhao, Weijie, Owen, Samuel Man Hon, Xiong, Qihua
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2020
• 主題: Science::Physics; Electron Doping; Gate‐tunable
• 在線閱讀: https://hdl.handle.net/10356/140460
• 機構: Nanyang Technological University

The gate‐tunable phonon properties in bilayer MoS2 are shown to be dependent on excitation energy. Raman intensity, Raman shift, and linewidth are affected by resonant excitation, while a nonresonant laser does not influence the intensity significantly. The gate‐dependent Raman shift of A1g mode (ei...