APA引文

Chen, Q., Zhang, L., Zhou, H., Li, W., Son, B. K., Tan, C. S., & Engineering, S. o. E. a. E. (2020). The effects of strain and composition on the conduction-band offset of direct band gap type-I GeSn/GeSnSi quantum dots for CMOS compatible mid-IR light source.

Chicago Style Citation

Chen, Qimiao, Lin Zhang, Hao Zhou, Wei Li, Bong Kwon Son, Chuan Seng Tan, and School of Electrical and Electronic Engineering. The Effects of Strain and Composition On the Conduction-band Offset of Direct Band Gap Type-I GeSn/GeSnSi Quantum Dots for CMOS Compatible Mid-IR Light Source. 2020.

MLA引文

Chen, Qimiao, et al. The Effects of Strain and Composition On the Conduction-band Offset of Direct Band Gap Type-I GeSn/GeSnSi Quantum Dots for CMOS Compatible Mid-IR Light Source. 2020.

警告:這些引文格式不一定是100%准確.