Double-spiral hexagonal boron nitride and shear strained coalescence boundary

• المؤلفون الرئيسيون: Park, Hyo Ju, Tay, Roland Yingjie, Wang, Xiao, Zhao, Wen, Kim, Jung Hwa, Ruoff, Rodney S., Ding, Feng, Teo, Edwin Hang Tong, Lee, Zonghoon
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2020
• الموضوعات: Engineering::Electrical and electronic engineering; Hexagonal Boron Nitride; Growth Mechanism
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/143560

Among the different growth mechanisms for two-dimensional (2D) hexagonal boron nitride (h-BN) synthesized using chemical vapor deposition, spiraling growth of h-BN has not been reported. Here we report the formation of intertwined double-spiral few-layer h-BN that is driven by screw dislocations loc...