Black GaAs : gold-assisted chemical etching for light trapping and photon recycling
Thanks to its excellent semiconductor properties, like high charge carrier mobility and absorption coefficient in the near infrared spectral region, GaAs is the material of choice for thin film photovoltaic devices. Because of its high reflectivity, surface microstructuring is a viable approach to f...
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sg-ntu-dr.10356-1453172023-02-28T19:54:15Z Black GaAs : gold-assisted chemical etching for light trapping and photon recycling Lova, Paola Soci, Cesare School of Physical and Mathematical Sciences Science::Chemistry Metal-assisted Chemical Etching Antireflection Thanks to its excellent semiconductor properties, like high charge carrier mobility and absorption coefficient in the near infrared spectral region, GaAs is the material of choice for thin film photovoltaic devices. Because of its high reflectivity, surface microstructuring is a viable approach to further enhance photon absorption of GaAs and improve photovoltaic performance. To this end, metal-assisted chemical etching represents a simple, low-cost, and easy to scale-up microstructuring method, particularly when compared to dry etching methods. In this work, we show that the etched GaAs (black GaAs) has exceptional light trapping properties inducing a 120 times lower surface reflectance than that of polished GaAs and that the structured surface favors photon recycling. As a proof of principle, we investigate photon reabsorption in hybrid GaAs:poly (3-hexylthiophene) heterointerfaces. Nanyang Technological University Published version C.S. would like to acknowledge the support of NTU Research Grant No. M4082409. 2020-12-17T04:00:16Z 2020-12-17T04:00:16Z 2020 Journal Article Lova, P., & Soci, C. (2020). Black GaAs : gold-assisted chemical etching for light trapping and photon recycling. Micromachines, 11(6), 573-. doi:10.3390/mi11060573 2072-666X https://hdl.handle.net/10356/145317 10.3390/mi11060573 32517034 6 11 en M4082409 Micromachines © 2020 The Authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). application/pdf |
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Science::Chemistry Metal-assisted Chemical Etching Antireflection Lova, Paola Soci, Cesare Black GaAs : gold-assisted chemical etching for light trapping and photon recycling |
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Thanks to its excellent semiconductor properties, like high charge carrier mobility and absorption coefficient in the near infrared spectral region, GaAs is the material of choice for thin film photovoltaic devices. Because of its high reflectivity, surface microstructuring is a viable approach to further enhance photon absorption of GaAs and improve photovoltaic performance. To this end, metal-assisted chemical etching represents a simple, low-cost, and easy to scale-up microstructuring method, particularly when compared to dry etching methods. In this work, we show that the etched GaAs (black GaAs) has exceptional light trapping properties inducing a 120 times lower surface reflectance than that of polished GaAs and that the structured surface favors photon recycling. As a proof of principle, we investigate photon reabsorption in hybrid GaAs:poly (3-hexylthiophene) heterointerfaces. |
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School of Physical and Mathematical Sciences |
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School of Physical and Mathematical Sciences Lova, Paola Soci, Cesare |
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Article |
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Lova, Paola Soci, Cesare |
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Lova, Paola |
title |
Black GaAs : gold-assisted chemical etching for light trapping and photon recycling |
title_short |
Black GaAs : gold-assisted chemical etching for light trapping and photon recycling |
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Black GaAs : gold-assisted chemical etching for light trapping and photon recycling |
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Black GaAs : gold-assisted chemical etching for light trapping and photon recycling |
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Black GaAs : gold-assisted chemical etching for light trapping and photon recycling |
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black gaas : gold-assisted chemical etching for light trapping and photon recycling |
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2020 |
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https://hdl.handle.net/10356/145317 |
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