APA引文

Patwal, S., & K, R. (2021). 2DEG enhancement via epilayer stress engineering in AlN/GaN/AlN heterostructure. Nanyang Technological University.

Chicago Style Citation

Patwal, Shashank, and Radhakrishnan K. 2DEG Enhancement Via Epilayer Stress Engineering in AlN/GaN/AlN Heterostructure. Nanyang Technological University, 2021.

MLA引文

Patwal, Shashank, and Radhakrishnan K. 2DEG Enhancement Via Epilayer Stress Engineering in AlN/GaN/AlN Heterostructure. Nanyang Technological University, 2021.

警告:這些引文格式不一定是100%准確.