Patwal, S., & K, R. (2021). 2DEG enhancement via epilayer stress engineering in AlN/GaN/AlN heterostructure. Nanyang Technological University.
استشهاد بنمط شيكاغوPatwal, Shashank, و Radhakrishnan K. 2DEG Enhancement Via Epilayer Stress Engineering in AlN/GaN/AlN Heterostructure. Nanyang Technological University, 2021.
MLA استشهادPatwal, Shashank, و Radhakrishnan K. 2DEG Enhancement Via Epilayer Stress Engineering in AlN/GaN/AlN Heterostructure. Nanyang Technological University, 2021.
تحذير: قد لا تكون هذه الاستشهادات دائما دقيقة بنسبة 100%.