Lingaparthi, R., Dharmarasu, N., Radhakrishnan, K., Ranjan, A., Seah, A. T. L., Huo, L., & Engineering, S. o. E. a. E. (2021). Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures.
استشهاد بنمط شيكاغوLingaparthi, R., Nethaji Dharmarasu, K. Radhakrishnan, A. Ranjan, Alex Tian Long Seah, Lili Huo, و School of Electrical and Electronic Engineering. Source of Two-dimensional Electron Gas in Unintentionally Doped AlGaN/GaN Multichannel High-electron-mobility Transistor Heterostructures. 2021.
MLA استشهادLingaparthi, R., et al. Source of Two-dimensional Electron Gas in Unintentionally Doped AlGaN/GaN Multichannel High-electron-mobility Transistor Heterostructures. 2021.