發送短信 : Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures

 ______    _    _              __   __   _    _   
|      \\ | || | ||   ____     \ \\/ // | |  | || 
|  --  // | || | ||  |    \\    \ ` //  | |/\| || 
|  --  \\ | \\_/ ||  | [] ||     | ||   |  /\  || 
|______//  \____//   |  __//     |_||   |_// \_|| 
`------`    `---`    |_|`-`      `-`'   `-`   `-` 
                     `-`