Lingaparthi, R., Dharmarasu, N., Radhakrishnan, K., Agrawal, M., & Engineering, S. o. E. a. E. (2021). In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high electron mobility transistor applications.

Lingaparthi, R., Nethaji Dharmarasu, K. Radhakrishnan, Manvi Agrawal, and School of Electrical and Electronic Engineering. In-situ Stress Evolution and Its Correlation With Structural Characteristics of GaN Buffer Grown On Si Substrate Using AlGaN/AlN/GaN Stress Mitigation Layers for High Electron Mobility Transistor Applications. 2021.

Lingaparthi, R., et al. In-situ Stress Evolution and Its Correlation With Structural Characteristics of GaN Buffer Grown On Si Substrate Using AlGaN/AlN/GaN Stress Mitigation Layers for High Electron Mobility Transistor Applications. 2021.