發送短信 : In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high electron mobility transistor applications

 _____       ___       _____    ______  __    __  
|  __ \\    / _ \\    / ___//  /_   _// \ \\ / // 
| |  \ ||  | / \ ||   \___ \\   -| ||-   \ \/ //  
| |__/ ||  | \_/ ||   /    //   _| ||_    \  //   
|_____//    \___//   /____//   /_____//    \//    
 -----`     `---`   `-----`    `-----`      `