A room-temperature gate-tunable bipolar valley Hall effect in molybdenum disulfide/tungsten diselenide heterostructures

• المؤلفون الرئيسيون: Jiang, Chongyun, Rasmita, Abdullah, Ma, Hui, Tan, Qinghai, Zhang, Zhaowei, Huang, Zumeng, Lai, Shen, Wang, Naizhou, Liu, Sheng, Liu, Xue, Yu, Ting, Xiong, Qihua, Gao, Weibo
• مؤلفون آخرون: School of Physical and Mathematical Sciences
• التنسيق: مقال
• اللغة: English
• منشور في: 2022
• الموضوعات: Science::Physics; Hall Effect; Heterojunctions
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/156337
• المؤسسة: Nanyang Technological University

Two-dimensional semiconductors have a valley degree of freedom that could be used as a platform for future optoelectronic devices. The valley Hall effect, caused by electrons in different valleys having opposite Berry curvatures, is important for making such devices, but has only been reported with...