Kang, Y., Xu, S., Han, K., Kong, E. Y., Song, Z., Luo, S., . . . Engineering, S. o. E. a. E. (2022). Ge₀.₉₅Sn₀.₀₅ gate-all-around p-channel metal-oxide-semiconductor field-effect transistors with sub-3 nm nanowire width.
Chicago Style CitationKang, Yuye, et al. Ge₀.₉₅Sn₀.₀₅ Gate-all-around P-channel Metal-oxide-semiconductor Field-effect Transistors With Sub-3 Nm Nanowire Width. 2022.
MLA引文Kang, Yuye, et al. Ge₀.₉₅Sn₀.₀₅ Gate-all-around P-channel Metal-oxide-semiconductor Field-effect Transistors With Sub-3 Nm Nanowire Width. 2022.
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