Enhanced electric resistivity and dielectric energy storage by vacancy defect complex

• المؤلفون الرئيسيون: Pan, Hao, Feng, Nan, Xu, Xing, Li, Weiwei, Zhang, Qinghua, Lan, Shun, Liu, Yi-Qian, Sha, Haozhi, Bi, Ke, Xu, Ben, Ma, Jing, Gu, Lin, Yu, Rong, Shen, Yang, Wang, Renshaw Xiao, MacManus-Driscoll, Judith L., Chen, Chong-Lin, Nan, Ce-Wen, Lin, Yuan-Hua
• مؤلفون آخرون: School of Physical and Mathematical Sciences
• التنسيق: مقال
• اللغة: English
• منشور في: 2022
• الموضوعات: Science::Physics; Dielectric Energy Storage; Defect
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/156689
• المؤسسة: Nanyang Technological University

The presence of uncontrolled defects is a longstanding challenge for achieving high electric resistivity and high energy storage density in dielectric capacitors. In this study, opposite to conventional strategies to suppress de- fects, a new approach, i.e. , constructing defects with deeper energy...