Wafer-scale growth of vertical-structured SnSe₂ nanosheets for highly sensitive, fast-response UV–Vis–NIR broadband photodetectors

• المؤلفون الرئيسيون: Chen, Zhiyong, Xiong, Lei, Li, Guangyuan, Wei, Lei, Yang, Chunlei, Chen, Ming
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2022
• الموضوعات: Engineering::Electrical and electronic engineering; Fibers; Ultraviolet–Visible–Near Infrared (UV–Vis–NIR)
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/156857

Owing to the strong light–matter interactions, 2D semiconducting thin films have shown their great potential in the development of high-performance ultraviolet–visible–near infrared (UV–Vis–NIR) broadband photodetectors (PDs). However, the planar 2D semiconducting thin films via conventional growth...