Flexible Germanium (Ge) devices for various applications in Internet of Things (IoT) era
In this final year project, we fabricated Germanium nanomembrane of 270 nm on a flexible substrate by transfer printing method. Based on this thin film, we performed tensile and compressive strain analysis as well as Raman-strain relation investigation. Also, the strain relaxation advantage br...
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| 主要作者: | |
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| 其他作者: | |
| 格式: | Final Year Project |
| 語言: | English |
| 出版: |
Nanyang Technological University
2022
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| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/158056 |
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| 總結: | In this final year project, we fabricated Germanium nanomembrane of 270 nm on a flexible
substrate by transfer printing method. Based on this thin film, we performed tensile and
compressive strain analysis as well as Raman-strain relation investigation. Also, the strain
relaxation advantage brought by transfer printing method was observed during strain
characterization.
Then the flexible Germanium thin film was further processed to flexible Germanium based
metal-semiconductor-metal photodetector. Dark current analysis with temperature and bending
variations were conducted. The measured room temperature dark current density is at a low
level, around 0.426 A cm-2
at 1 V, indicating that good quality flexible Ge thin film
photodetector was achieved. Discussions on dark current mechanisms based on ideality factor
and activation energy, as well as paper study on the strain-energy bandgap relation of our
fabricated device are covered in the report, |
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