Free-standing 2D non-van der Waals antiferromagnetic hexagonal FeSe semiconductor: halide-assisted chemical synthesis and Fe²⁺ related magnetic transitions

The scarcity of two-dimensional (2D) magnetic nanostructures has hindered their applications in spintronics, which is attributed to that most magnetic materials exhibit non-van der Waals (nvdWs) structures and it is hard to reduce their thickness to 2D nanostructures. Thus it is necessary to develop...

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Main Authors: Xu, Junjie, Li, Wei, Zhang, Biao, Zha, Liang, Hao, Wei, Hu, Shixin, Yang, Jinbo, Li, ShuZhou, Gao, Song, Hou, Yanglong
其他作者: School of Materials Science and Engineering
格式: Article
語言:English
出版: 2022
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在線閱讀:https://hdl.handle.net/10356/163255
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spelling sg-ntu-dr.10356-1632552023-07-14T16:06:33Z Free-standing 2D non-van der Waals antiferromagnetic hexagonal FeSe semiconductor: halide-assisted chemical synthesis and Fe²⁺ related magnetic transitions Xu, Junjie Li, Wei Zhang, Biao Zha, Liang Hao, Wei Hu, Shixin Yang, Jinbo Li, ShuZhou Gao, Song Hou, Yanglong School of Materials Science and Engineering Engineering::Materials 2D-Hexagonal Anisotropic Growth The scarcity of two-dimensional (2D) magnetic nanostructures has hindered their applications in spintronics, which is attributed to that most magnetic materials exhibit non-van der Waals (nvdWs) structures and it is hard to reduce their thickness to 2D nanostructures. Thus it is necessary to develop a promising strategy for free-standing 2D magnetic nvdWs nanostructures. We have achieved free-standing 2D nvdWs hexagonal FeSe with a thickness of 2.9 nm by the reaction between the oleylamine-Se complex and Fe2+ with the assistance of Cl-, where the synergetic effects of Cl- and -NH2 lead to anisotropic growth. Inspiringly, the 2D hexagonal FeSe exhibits intrinsic antiferromagnetic order rooted in Fe2+ and semiconducting nature. In addition, the temperature variation would result in the chemical environment changes of Fe2+, responsible for the temperature-dependent magnetic transitions. This work promotes the potential applications of 2D hexagonal FeSe and the preparation of other 2D nvdWs materials. Published version This work was financially supported by the National Key R&D Program of China (2017YFA0206301), the National Natural Science Foundation of China (52027801 and 51631001), Natural Science Foundation of Beijing Municipality (2191001) and the China-German Collaboration Project (M-0199). 2022-11-29T07:08:54Z 2022-11-29T07:08:54Z 2022 Journal Article Xu, J., Li, W., Zhang, B., Zha, L., Hao, W., Hu, S., Yang, J., Li, S., Gao, S. & Hou, Y. (2022). Free-standing 2D non-van der Waals antiferromagnetic hexagonal FeSe semiconductor: halide-assisted chemical synthesis and Fe²⁺ related magnetic transitions. Chemical Science, 13(1), 203-209. https://dx.doi.org/10.1039/d1sc04122c 2041-6520 https://hdl.handle.net/10356/163255 10.1039/d1sc04122c 35059168 2-s2.0-85121854728 1 13 203 209 en Chemical Science © 2022 The Author(s). Published by the Royal Society of Chemistry. This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering::Materials
2D-Hexagonal
Anisotropic Growth
spellingShingle Engineering::Materials
2D-Hexagonal
Anisotropic Growth
Xu, Junjie
Li, Wei
Zhang, Biao
Zha, Liang
Hao, Wei
Hu, Shixin
Yang, Jinbo
Li, ShuZhou
Gao, Song
Hou, Yanglong
Free-standing 2D non-van der Waals antiferromagnetic hexagonal FeSe semiconductor: halide-assisted chemical synthesis and Fe²⁺ related magnetic transitions
description The scarcity of two-dimensional (2D) magnetic nanostructures has hindered their applications in spintronics, which is attributed to that most magnetic materials exhibit non-van der Waals (nvdWs) structures and it is hard to reduce their thickness to 2D nanostructures. Thus it is necessary to develop a promising strategy for free-standing 2D magnetic nvdWs nanostructures. We have achieved free-standing 2D nvdWs hexagonal FeSe with a thickness of 2.9 nm by the reaction between the oleylamine-Se complex and Fe2+ with the assistance of Cl-, where the synergetic effects of Cl- and -NH2 lead to anisotropic growth. Inspiringly, the 2D hexagonal FeSe exhibits intrinsic antiferromagnetic order rooted in Fe2+ and semiconducting nature. In addition, the temperature variation would result in the chemical environment changes of Fe2+, responsible for the temperature-dependent magnetic transitions. This work promotes the potential applications of 2D hexagonal FeSe and the preparation of other 2D nvdWs materials.
author2 School of Materials Science and Engineering
author_facet School of Materials Science and Engineering
Xu, Junjie
Li, Wei
Zhang, Biao
Zha, Liang
Hao, Wei
Hu, Shixin
Yang, Jinbo
Li, ShuZhou
Gao, Song
Hou, Yanglong
format Article
author Xu, Junjie
Li, Wei
Zhang, Biao
Zha, Liang
Hao, Wei
Hu, Shixin
Yang, Jinbo
Li, ShuZhou
Gao, Song
Hou, Yanglong
author_sort Xu, Junjie
title Free-standing 2D non-van der Waals antiferromagnetic hexagonal FeSe semiconductor: halide-assisted chemical synthesis and Fe²⁺ related magnetic transitions
title_short Free-standing 2D non-van der Waals antiferromagnetic hexagonal FeSe semiconductor: halide-assisted chemical synthesis and Fe²⁺ related magnetic transitions
title_full Free-standing 2D non-van der Waals antiferromagnetic hexagonal FeSe semiconductor: halide-assisted chemical synthesis and Fe²⁺ related magnetic transitions
title_fullStr Free-standing 2D non-van der Waals antiferromagnetic hexagonal FeSe semiconductor: halide-assisted chemical synthesis and Fe²⁺ related magnetic transitions
title_full_unstemmed Free-standing 2D non-van der Waals antiferromagnetic hexagonal FeSe semiconductor: halide-assisted chemical synthesis and Fe²⁺ related magnetic transitions
title_sort free-standing 2d non-van der waals antiferromagnetic hexagonal fese semiconductor: halide-assisted chemical synthesis and fe²⁺ related magnetic transitions
publishDate 2022
url https://hdl.handle.net/10356/163255
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