Burt, D., Zhang, L., Jung, Y., Joo, H., Kim, Y., Chen, M., . . . Engineering, S. o. E. a. E. (2023). Tensile strained direct bandgap GeSn microbridges enabled in GeSn-on-insulator substrates with residual tensile strain.
استشهاد بنمط شيكاغوBurt, Daniel, et al. Tensile Strained Direct Bandgap GeSn Microbridges Enabled in GeSn-on-insulator Substrates With Residual Tensile Strain. 2023.
MLA استشهادBurt, Daniel, et al. Tensile Strained Direct Bandgap GeSn Microbridges Enabled in GeSn-on-insulator Substrates With Residual Tensile Strain. 2023.
تحذير: قد لا تكون هذه الاستشهادات دائما دقيقة بنسبة 100%.