APA引文

Tan, E., & K, R. (2023). Regrown ohmic contact to GaN-based high electron mobility transistors. Nanyang Technological University.

Chicago Style Citation

Tan, Eleen, and Radhakrishnan K. Regrown Ohmic Contact to GaN-based High Electron Mobility Transistors. Nanyang Technological University, 2023.

MLA引文

Tan, Eleen, and Radhakrishnan K. Regrown Ohmic Contact to GaN-based High Electron Mobility Transistors. Nanyang Technological University, 2023.

警告：這些引文格式不一定是100％准確.