Tan, E., & K, R. (2023). Regrown ohmic contact to GaN-based high electron mobility transistors. Nanyang Technological University.
استشهاد بنمط شيكاغوTan, Eleen, و Radhakrishnan K. Regrown Ohmic Contact to GaN-based High Electron Mobility Transistors. Nanyang Technological University, 2023.
MLA استشهادTan, Eleen, و Radhakrishnan K. Regrown Ohmic Contact to GaN-based High Electron Mobility Transistors. Nanyang Technological University, 2023.
تحذير: قد لا تكون هذه الاستشهادات دائما دقيقة بنسبة 100%.