Atomic transistors beyond Moore's law

• المؤلف الرئيسي: Li, Haifeng
• مؤلفون آخرون: Song Peng
• التنسيق: Thesis-Master by Coursework
• اللغة: English
• منشور في: Nanyang Technological University 2023
• الموضوعات: Engineering::Electrical and electronic engineering::Electronic apparatus and materials; Engineering::Electrical and electronic engineering::Nanoelectronics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/168077
• المؤسسة: Nanyang Technological University

This dissertation presents the characterization and fabrication of black phosphorous (BP) field-effect transistors (FETs). Schottky barrier and carrier transport regime at the metal/semiconductor interface is modified by forming a van der Waals heterostructure, which causes the reduction of the cont...