APA استشهاد

Abbas, H., Ali, A., Li, J., Tun, T. T. T., Ang, D. S., & Engineering, S. o. E. a. E. (2023). Forming-free, self-compliance WTe₂-based conductive bridge RAM with highly uniform multilevel switching for high-density memory.

استشهاد بنمط شيكاغو

Abbas, Haider, Asif Ali, Jiayi Li, Thaw Tint Te Tun, Diing Shenp Ang, و School of Electrical and Electronic Engineering. Forming-free, Self-compliance WTe₂-based Conductive Bridge RAM With Highly Uniform Multilevel Switching for High-density Memory. 2023.

MLA استشهاد

Abbas, Haider, et al. Forming-free, Self-compliance WTe₂-based Conductive Bridge RAM With Highly Uniform Multilevel Switching for High-density Memory. 2023.

تحذير: قد لا تكون هذه الاستشهادات دائما دقيقة بنسبة 100%.