Charged vacancy defects in monolayer phosphorene

• المؤلفون الرئيسيون: Rijal, Biswas, Tan, Anne Marie Z., Freysoldt, Christoph, Hennig, Richard G.
• مؤلفون آخرون: School of Mechanical and Aerospace Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2023
• الموضوعات: Engineering::Mechanical engineering; Carrier Concentration; Carrier Mobility
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/170796

Two-dimensional semiconductor phosphorene has attracted extensive research interests for potential applications in optoelectronics, spintronics, catalysis, sensors, and energy conversion. To harness phosphorene's potential requires a better understanding of how intrinsic defects control carrier...