Lingaparthi, R., Dharmarasu, N., Radhakrishnan, K., Huo, L., & Engineering, S. o. E. a. E. (2023). Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures—experimental evidence of the hole trap state.

Lingaparthi, R., Nethaji Dharmarasu, K. Radhakrishnan, Lili Huo, و School of Electrical and Electronic Engineering. Source of Two-dimensional Electron Gas in Unintentionally Doped AlGaN/GaN Multichannel High-electron-mobility Transistor Heterostructures—experimental Evidence of the Hole Trap State. 2023.

Lingaparthi, R., et al. Source of Two-dimensional Electron Gas in Unintentionally Doped AlGaN/GaN Multichannel High-electron-mobility Transistor Heterostructures—experimental Evidence of the Hole Trap State. 2023.