發送短信 : Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures—experimental evidence of the hole trap state

 ______      ___      _  _      ___     __   __  
|      \\   / _ \\   | \| ||   / _ \\   \ \\/ // 
|  --  //  | / \ ||  |  ' ||  | / \ ||   \   //  
|  --  \\  | \_/ ||  | .  ||  | \_/ ||   / . \\  
|______//   \___//   |_|\_||   \___//   /_//\_\\ 
`------`    `---`    `-` -`    `---`    `-`  --`