發送短信 : Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures—experimental evidence of the hole trap state

 ______      ___      ______    ______   _    _   
|      \\   / _ \\   /_   _//  /_   _// | || | || 
|  --  //  / //\ \\    | ||     -| ||-  | || | || 
|  --  \\ |  ___  ||  _| ||     _| ||_  | \\_/ || 
|______// |_||  |_|| /__//     /_____//  \____//  
`------`  `-`   `-`  `--`      `-----`    `---`