In-plane charged antiphase boundary and 180° domain wall in a ferroelectric film

The deterministic creation and modification of domain walls in ferroelectric films have attracted broad interest due to their unprecedented potential as the active element in non-volatile memory, logic computation and energy-harvesting technologies. However, the correlation between charged and antip...

全面介紹

Saved in:
書目詳細資料
Main Authors: Cai, Xiangbin, Chen, Chao, Xie, Lin, Wang, Changan, Gui, Zixin, Gao, Yuan, Kentsch, Ulrich, Zhou, Guofu, Gao, Xingsen, Chen, Yu, Zhou, Shengqiang, Gao, Weibo, Liu, Jun-Ming, Zhu, Ye, Chen, Deyang
其他作者: School of Physical and Mathematical Sciences
格式: Article
語言:English
出版: 2024
主題:
在線閱讀:https://hdl.handle.net/10356/173776
標簽: 添加標簽
沒有標簽, 成為第一個標記此記錄!
機構: Nanyang Technological University
語言: English