In-plane charged antiphase boundary and 180° domain wall in a ferroelectric film
The deterministic creation and modification of domain walls in ferroelectric films have attracted broad interest due to their unprecedented potential as the active element in non-volatile memory, logic computation and energy-harvesting technologies. However, the correlation between charged and antip...
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Main Authors: | , , , , , , , , , , , , , , |
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其他作者: | |
格式: | Article |
語言: | English |
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2024
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主題: | |
在線閱讀: | https://hdl.handle.net/10356/173776 |
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機構: | Nanyang Technological University |
語言: | English |