APA引文

Ong, E. W. H., & Ing, N. G. (2024). Studies of gallium nitride (GaN) based high electron mobility transistor (HEMTS). Nanyang Technological University.

Chicago Style Citation

Ong, Eugene Wei Han, and Ng Geok Ing. Studies of Gallium Nitride (GaN) Based High Electron Mobility Transistor (HEMTS). Nanyang Technological University, 2024.

MLA引文

Ong, Eugene Wei Han, and Ng Geok Ing. Studies of Gallium Nitride (GaN) Based High Electron Mobility Transistor (HEMTS). Nanyang Technological University, 2024.

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